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Abbreviations_complete_mono.csv
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Abbreviations;Meaning
ω;Frequency
%;Percentage
1;1-Trichloroethane
1D;One Dimensional
1T-1C;1 Transistor/1 Capacitor
1T-2C;1 Transistor/2 Capacitor
2D;Two Dimensional
2DEG;Two Dimensional Electron Gas
3D;Three Dimensional
4G;4th Generation
A&P;Assembly And Packaging
A-GEMTF;Advanced Gem Task Force
A/D;Analog To Digital
A/R;Aspect Ratio
AA;Atomic Absorption
AAF;Assembly Analytical Forum
AAS;Atomic Absorption Spectroscopy
AAS/GFAAS;Atomic Absorption Spectroscopy/Graphite Furnace Atomic Absorption Spectroscopy
ABC;Activity-Based Costing
ABM;Activity-Based Management
ABS;Antilock Braking System
ABT;Abrasive Technology
ABW;Apparent Beam Width
AC;Alternating Current
ACCESS;Analysis Computer For Component Engineering Services Support
ACF;Anisotropic Conductive Film
ACGHIC;American Conference Of Governmental Industrial Hygienists
ACI;After Clean Inspection
ACLV;Across-Chip Linewidth Variation
ACP;Anisotropic Conductive Paste
ACPR;Adjacent Channel Power Ratio
ACT;Alternative Control Techniques
ADC;Analog-To-Digital Converter
ADC/DAC;Analog-Digital Converter/Digital-Analog Converter
ADE;Advanced Development Environment
ADI;After Develop Inspection
ADIG;Application Development Interface Guidelines
ADIO;Analog/Digital Input/Output
ADL;Add Lot
ADP;Administrative Data Processing
ADR;Automatic Defect Review
ADSL;Asymmetrical Digital Subscriber List
ADT;Applied Diagnostic Techniques
ADTSEM;Apply/Develop Track Specific Equipment Model
AE;Atomic Emission
AEC;Advanced Equipment Controller
AECS;Advanced Equipment Control System
AEI;After Etch Inspection
AEM;Analytical Electron Microscopy
AES;Auger Emission Spectroscopy
AET;Accelerated Environmental Test
AEX;Acid Exhaust
AFD;Application Framework Definition
AFM;Atomic Force Microscopy
AFP;Abrasive-Free Polish
AGC;Automatic Gain Control
AGREE;Advisory Group Reliability Of Electronic Equipment
AGV;Automated Guided Vehicle
AHF;Anhydrous Hydrogen Fluoride
AHU;Air Handling Unit
AI;Artificial Intelligence
AIAG;Automotive Industry Action Group
AIMS;Aerial Image Microscope
AIR;Automated Image Retrieval
ALCVD;Atomic Layer Chemical Vapor Deposition
ALD;Atomic Layer Deposition
ALE;Atomic Layer Epitaxy
ALID;Alarm Event Identifier
ALS;Advanced Light Source (Lbnl)
ALT;Accelerated Life Test
ALU;Arithmetic Logic Unit
AMC;Airborne Molecular Contamination
AMH;Automated Material Handling
AMHS;Automated Material Handling System
AML;Automatic Model Linking
AMS;Analog/Mixed-Signal
AMSRF;Analog
AMT;Advanced Manufacturing Technology
AMU;Atomic Mass Unit
ANN;Artificial Neural Network
ANOVA;Analysis Of Variance
ANS;Advanced Nanodefect Surface Inspection System
ANSI;American National Standards Institute
AOI;Automatic Optical Inspection
AOQL;Average Outgoing Quality Level
AOV;Air-Operated Valve
AP;Adhesion Promoter
APA;Advanced Performance Algorithm
APC;Advanced Process Control
APCD;Add-On Pollution Control Devices
APCFI;Advanced Process Control Framework Initiative
APCVD;Atmospheric Pressure Chemical Vapor Deposition
APD;Adhesion Promoter Dispense
APDs;Generally Avalanche Photodiodes
APEC;Advanced Process Equipment Control
APG;Algorithmic Pattern Generator
API;Application Programming Interface
APIMS;Atmospheric Pressure Ionization Mass Spectroscopy
APM;Atmospheric Passivation Module
APQP;Advanced Product Quality Planning
APRDL;Advanced Products Research And Development Laboratory
APS;Active Pixel Sensor
APT;Advanced Probe Technology
AQ;Administrative Quality
AQI;Access Query Interface
AQL;Acceptance Quality Level: Acceptable Quality Level
AQTX;Aquatic Toxicity
AR;Aspect Ratio
ARAMS;Automated Reliability
ARC;Antireflective Coating
ARDE;Aspect Ratio-Dependent Etching
ARIMA;Auto Regressive Moving Average With Integration
ARO;After Receipt Of Order
ARPA;Advanced Research Projects Agency (See Darpa)
ARRC;Advanced R2R Control
ARS;Angle-Resolved Scattering
AS/RS;Automated Storage And Retrieval System
ASAP;Advanced Stepper Application Program
ASHRAE;American Society Of Heating Refrigeration And Airconditioning Engineers
ASIC;Application Specific Integrated Circuit
ASIC/LP;Low Power Asic
ASICs;Application Specific Integrated Circuits
ASME;American Society For Mechanical Engineering
ASO;Automatic Shutoff
ASP;Advanced Strip And Passivation
ASR;Automated Send Receive
ASSP;Application-Specific Standard Product
AST;Accelerated Stress Test
ASTM;American Society For Testing And Materials
ASV;Advanced Safety Vehicle
ATA;Advanced Test Accelerator
ATDF;Advanced Tool Development Facility
ATE;Automatic Test Equipment
ATF;Automation Test Facility (Recently Renamed Sil)
ATG;Automatic Test Generation
ATLAS;Abbreviated Test Language For All Systems
ATP;Advanced Technology Program
ATPG;Automatic Test Pattern Generation
ATR;Attenuated Total Reflectance
ATR-FTIR;Attenuated Total Reflectance Fourier Transform Infrared Spectroscopy
ATS;Aggressive Thread Seal
AVA;Automatic Variable Aperture
AVP;Advanced Vertical Processor
AVR;Applied Voltage Ratio
AVRs;Applied Voltage Ratios
AVS;Advanced Visualization System
AWE;Asymptotic Waveform Evaluation
AWG;Array Waveguide Gratings
AWG/Sin;Arbitrary Waveform Generations/Sine Wave
AWISPM;Above-Wafer In Situ Particle Monitoring
AWS;Advanced Wet Station
Ac;Actinium
Ad;Analog Design
Ag;Silver
Al;Aluminum
AlF;Aluminum Fluoride
Alt;Alternating
Am;Americium
Ar;Argon
ArF;Exposure Wavelength
As;Arsenic
At;Astatine
Att;Attenuated
Au;Gold
B;Billion
BACT;Best Available Control Technology
BARC;Backside Antireflective Coating
BASE;Boston Area Semiconductor Education (Council)
BAW;Bulk Acoustic Wave
BC;Bias Contrast
BCAD ;Business Computer-Aided Manufacturing
BCB;Benzocyclobutene
BCD;Binary Coded Decimal
BD;Breakdown
BDEV;Behavior-Level Deviation
BDS;Brownian Dynamics Simulation
BED;Boron Enhanced Diffusion
BEI;Backscattered Electron Imaging
BEM;Backside Emission Microscopy
BENU;Bull'S Eye Nonuniformity
BEOL;Back End-Of-Line
BER;Bit Error Rate
BERT;Bit Error Rate Tester
BES;Backscatter Electron Signal
BESOI;Bonded And Etchback Soi
BF;Brightfield I
BFA;Bouncing Failure Analysis
BFGS;Broyden-Fletcher-Goldfarb-Shanno Optimization Algorithm
BFL ;Buffered Field-Effect-Transistor Logic
BGA;Ball Grid Array
BGAs;Ball Grid Arrays
BGBC;Gate Bottom Contact
BGS;Bulk Gas System
BHT;Brinell Hardness Test
BI;Burn In
BIFET;Bipolar Field-Effect Transistor
BILLI;P+ Buried Layer
BIM;Binary Intensity Mask
BIR;Building-In Reliability
BIRA;Built-In Redundancy Allocation
BISR;Built-In Self Repair
BIST;Built-In Self Test
BIT;Bulk Ion Temperature
BITE;Built-In Test Equipment
BJT;Bipolar Junction Transistor
BKM;Best Known Methods
BLD;Beam Lead Device
BLEVE;Boiling Liquid Expanding Vapor Explosion
BLOK;Barrier Low-K
BLT;Bismuth Lanthanum Titanate
BMC;Bubble Memory Controller
BMD;Bulk Micro Defect
BME;Base Metal Electrode
BOE;Buffered Oxide Etchant
BOR;Bottom Of Range
BOSS;Book Of Semi Standards
BOST;Built Off-Chip Self Test
BOX;Buried Oxide
BPE;Beam Profile Ellipsometry
BPR;Beam Profile Reflectometry
BPSG;Boro Phosphosilicate Glass
BPTEOS;Borophosphosilicate Glass From A Teos Oxysilane Source
BSE;Backscattered Electron Detection
BSEs;Topology Differences Backscattered Electrons
BSR;Backside Rinse
BST;Barium Strontium Titanate
BT;Bismallimide Triazene
BTAB;Bumped Tape Automated Bonding
BTS;Biased Thermal Stress
BV;Breakdown Voltage
BVH;Buried Via Hole
BVcbo;Collector Base Breakdown Voltage With Open Emitter
BVceo;Collector Emitter Breakdown Voltage With Open Base
BVdgo;Drain And Gate Breakdown Voltage With Open Source
BVdso;Drain Source Breakdown Voltage With Open Gate
BW;Bandwidth
Ba;Barium
Be;Beryllium
Bi;Bismuth
BiCMOS;Bipolar Complementary Metal-Oxide Semiconductor
BiMOS;Bipolar Metal-Oxide Semiconductor
BiR;Building In Reliability
BioMEMS;Biological Mems
Bk;Berkelium
Br;Bromine
C;Carbon
C-SAM;C-mode Scanning Acoustic Microscopy
C-V;Capacitance-To-Voltage
C-to-C;Cassette-To-Cassette
CA ;Cim Architecture
CAA;Cim Applications Architecture
CAB;Competitive Analysis Benchmarking
CAD;Computer-Aided Design
CADS;Computer Aided Design System
CADT;Control Application Development Tool
CAE;Computer-Aided Engineering
CAF;Controlled Ambient Facility
CAFM;Conductive Atomic Force Microscopy
CAG;Competitive Analysis Group
CAI;Computer-Assisted Instruction
CALCE;Computer-Aided Life-Cycle Engineering
CALS;Computer-Aided Logistics Support (Air Force Program)
CAM;Computer-Aided Manufacturing
CAP;Consumables Acceleration Program
CAPS;Computer-Assisted Problem Solving
CAR;Computer-Aided Research
CARC;Critical Aspect Ratio Collapse
CARL;Chemically Amplified Resist Lithography
CARR;Compound Annual Reduction Rate
CARRI;Computerized Assessment Of Relative Risk Impacts
CASE;Computer-Aided Software Engineering
CAT;Computer-Aided Testing
CATV;Community Access Television or Community Antenna Television
CAW;Construction Analysis Workgroup
CAWC;Cryogenic Aerosol Wafer Cleaning
CBD;Chemical Bath Deposition
CBGA;Ceramic Ball Grid Array
CBIR;Content-Based Image Retrieval
CBL;Bitline Capitance Per Cell
CBR;Based Reasoning
CBS;Chemical Bottle Storage Area
CBT;Computer-Based Training
CC;Chip Carrier
CCC;Ceramic Chip Carrier
CCD;Charge-Coupled Device
CCGA;Ceramic Column Grid Array
CCOS;Computer-Controlled Optical Surfacing
CCS;Constant Current Stress
CCSL;Compatible Current-Sinking Logic
CCSs;Constant Current Stresses
CCVC;Capacitive Coupling Voltage Contrast
CCW;Counterclockwise
CD;Critical Dimension
CD-ROM;Compact Disk Read-Only Memory
CD/OL;Critical Dimension Overlay
CDA;Clean Dry Air
CDC;Chemical Data Council
CDE;Chemical Downstream Etch
CDEM;Customer Delivery Enterprise Model
CDEs;Cable Discharge Events
CDG;Ceramic Diaphragm Gauge
CDI;Collector-Diffusion Isolation
CDM;Common Device Model For Sab
CDMA;Code Division Multiple Access
CDO;Controlled Decomposition/Oxidation
CDR;Chemical Distribution Room
CDU;Chemical Dispense Unit
CE;Capillary Electrophoresis
CEC;Cell Evaluation Chip
CEE;Control Execution Environment
CEID;Collection Event Identifier
CEM;Continuous Emissions Monitoring
CEN;Change Engineering Notice
CEP;Chemically Enhanced Planarization
CEPT;Comets Equipment Performance Tracking
CER-DIP;Ceramic Dual In-Line Package
CERDIP;Ceramic Dual-In-Line Package
CERQUAD;Ceramic QUAD Flat Package
CESL;Contact Etch Stop Layer
CFA;Component Failure Analysis
CFC;Chlorofluorocarbon
CFD;Computational Fluid Dynamics
CFE;Cold Field Emission
CFI;Cad Framework Initiative
CFM;Contamination-Free Manufacturing
CFMRC;Contamination-Free Manufacturing Research Center
CFR;Constant Failure Rate
CFT;Cross-Functional Team
CFU;Colony Forming Unit
CGA;Compressed Gas Association
CHC;Channel Hot Carrier
CHE;Channel Hot Electrons
CHEs;Carriers Channel Hot Electrons
CHP;Coat Hotplate
CHR;Communication History Report
CI;Carrier Illumination
CIC;Cleanroom Interface Chamber
CID;Charge-Injection Device
CIE;Computer-Integrated Engineering
CIM;Computer-Integrated Manufacturing
CIM-OSA;Computer-Integrated Manufacturing-Open Systems Architecture (Esprit Program)
CIP;Continuous Improvement Program
CIS;Center For Integrated Systems
CISC;Complex Instruction Set Computer
CLC;Cancel Lot Cycle
CLCC;Ceramic Leaded Chip Carrier
CLIC;Closed-Loop Intensity Control
CLSM;Confocal Laser Scanning Microscopy
CLY;Circuit-Limited Yield
CM;Configuration Management
CMA;Cylindrical Mirror Analyzer
CMC;Cassette Module Controller
CML;Current Mode Logic
CMM;Capability Maturity Model
CMOS;Complementary Metal-Oxide-Silicon
CMP;Chemical Mechanical Planarization
CMR;Common-Mode Rejection Ratio
CMS;Coordinate Measuring System
CMUG;Cost Modeling Users Group
CNC;Computer Numerical Control
CNN;Cellular Non-Linear Network
CNS;Central Nervous System
CNT;Carbon Nanotube
CNTs;Carbon Nanotubes
COB;Chip-On-Board
COC;Cost Of Consumables
CODEC;Coder-Decoder
COED;Computer Optimized Experimental Design
COGS;Cost Of Goods Sold
COO;Chief Operating Officer
COOL;Cost Of Ownership Luminator (Wright
COP;Crystal Originated Pit
COPS;Crystal Oriented Pits
CORBA;Common Object Request Broker Architecture
CORE;Composite Object Reference
COS;Coronoa-Oxide-Semiconductor
COSS;Common Object Services Specification
COT;Customer-Owned Tooling
COTS;Commercial Off-The-Shelf
COV;Coefficient Of Variance
CP;Cost-Performance
CP/M;Computer Program/Maintenance
CPA;Commerical Product Adhesive
CPD;Concurrent Product Development
CPE;Communications
CPGA;Ceramic Pin Grid Array
CPI;Continuous Process Improvement
CPM;Chamber Pressure Management
CPMT;Packaging And Manufacturing Technology
CPU;Central Processing Unit
CQED;Cavity Quantum Electrodynamics
CQFP;Ceramic Quad Flat Pack
CQN;Closed-Queuing Network
CRADA;Cooperative Research And Development Agreement
CRC;Cyclic Redundancy Check
CRM;Cost/Resource Model
CRT;Cathode Ray Tube
CSA;Cim Systems Architecture
CSD;Chemical Solution Deposition
CSE;Control Systems Engineering
CSF;Critical Success Factor
CSG;Silicon On Glass
CSIC;Ieee Compound Semiconductor Ic
CSL;Current-Steering Logic
CSLM;Confocal Scanning Laser Microscope
CSM;Continuous Stiffness Measurement
CSMA/CD;Carrier-Sense
CSP;Chip-Scale Package
CSPED;Concurrent Semiconductor Production And Equipment Development
CST;Cim Systems Technology
CSTR;Continuously Stirred Tank Reactor
CSV;Comma-Separated Variable
CT;Cycle Time
CTC;Cluster Tool Controller
CTE;Coefficient Of Thermal Expansion
CTI;Computer-Telephone Integration
CTL;Complementary Transistor Logic
CTMC;Cluster Tool Modular Communications
CTR;Current Transfer Ratio
CUB;Central Utility Building
CUBES;Capacity Utilization Bottleneck Efficiency System
CUI;Common User Interface
CUSUM;Cumulative Sum
CV;Capacitance Voltage
CV-BTS;Capacitance-To-Voltage Iased Thermal Stress
CV/I;Intrinsic Transistor Delay
CVA;Continuous Variable Aperture
CVC;Chemical Vapor Cleaning
CVCM;Collected Volatile Condensable Materials
CVD;Chemical Vapor Deposition
CVS;Cyclic Voltammetry Stripping
CW;Continuous Wave
CWL;Wordline Capacitance Per Cell
CWS;Chilled Water System
CYM;Cycle Model
CZ;Czochralski
Ca;Calcium
Cb;Columbiun
Cd;Cadmium
Ce;Cerium
Cf;Californium
Cgate;Gate Capacitance
Cl;Chlorine
Cm;Curium
Co;Cobalt
CoO;Cost Of Ownership
CoV;See Cov
CoWP;Cobalt Tungsten Phosphide
Cox;Oxide Capacitance
Cp;Process Capability
Cparasitic;Parasitic Capacitance
Cpk;Process Capability Index
Cr;Chromium
Cr ;Chromium
Cs;Cesium
Cu;Copper
Cz;Czochralski Process
D;Deuterium
D/A;Digital To Analog
D/B;Die Bonding
D/I;Develop Inspect
D0;Defect Density
DAC;Digital-To-Analog Converter
DAFs;Die Attach Films
DAHCs;Field Drain Avalanche Hot Carriers
DARPA;Defense Advanced Research Projects Agency (See Arpa)
DAS;Direct Absorption Spectroscopy
DASSL;Differential Algebraic System Solver
DAT;Direct Access Dft
DB;Dielectric Breakdown
DBIE;Db Induced Epitaxy
DBMS;Database Management System
DBP;Data Processing Board
DBS;Dual Beam Spectroscopy
DC;Direct Current
DC-DC;Dc To Dc Conversion
DCA;Direct Chip Attachment
DCATS;Double-Contained Acid Transfer System
DCCF;Discounted Cumulative Cash Flow
DCE;Distributed Computer Environment
DCFL;Direct Coupled Fet Logic
DCG;Distortion Calibration Grid
DCL;Digital Command Language
DCS;Dichlorosilane
DCV;Direct Contact Via
DCVD;Dieletric Chemical Vapor Deposition
DD;Defect Density
DDAF;Dicing Die Attach Film
DDH;Direct-To-Digital Holography
DDL;Device Description Language
DDMS;Defect Data Management System
DECT;Digital European Cordless Telephone
DEDS ;Discrete-Event Dynamic Simulation
DEE;Detailed Equipment Events
DEMO;Demonstration
DEMUX;To Be Filled In
DES;Data Encryption Standard
DF;Darkfield
DFC;Densified Fluid Clean
DFE;Dual Frequency Etch
DFESH;Design For Esh
DFFA;Design For Failure Analysis
DFLP;Design For Low Power
DFM;Design For Manufacture
DFR;Design For Reliability
DFS;Design for Safety
DFSS;Design For Six Sigma
DFT;Design For Testability
DG;Double Gate
DGM;Dynamic Grid Matching
DGSOI;Double-Gate Silicon-On- Insulator
DHF;Dilute Hydrofluoric Acid
DI;Deionized
DIBL;Drain-Induced Drain Leakage
DIC;Differential Interference Contrast
DICE;Darpa Initiative In Concurrent Engineering
DIL;Dual Inline
DIMM;Dual In-line Memory Module
DIP;Dual Inline Package
DJ;Deterministic Jitter
DLBI;Device Level Burn-In
DLL;Dynamic Link Library
DLM;Dual-Level Metal
DLOC;Developed Source Lines Of Code
DLS;Display Lot Status
DLT;Device Level Test
DLTS;Deep Level Transient Spectroscopy
DM;Defect Management
DMA;Direct Memory Access
DMD;Digital Micromirror Device
DMH ;Display Message Helps
DML;Data Manipulation Language
DMM;Digital Multimeter
DMOS;Diffused Metal-Oxide Semiconductor
DMR;Display Move Requests
DMS;Data Management Standard
DNN;Dark Narrow Normal
DNO;Dark Narrow Oblique
DO;Dynamic Optimization
DOA;Dead-On Alignment
DOAS;Differential Optical Absorption Spectroscopy
DOE;Design Of Experiments
DOF;Depth Of Field
DOP;Dioctylphthalate
DOS;Disk Operating System
DOTS;Digital-Optical Technology System
DPA;Destructive Physical Analysis
DPB;Data Processing Board
DPI;Dots Per Inch
DPM;Digital Panel Meter
DPPM;Defects Parts Per Million
DPS;Display Process Status
DPSRAM;Dual-Port Static Random Access Memory
DRAM;Dynamic Random Access Memory
DRAMs;Intact Dynamic Random Access Memories
DRAPAC;Design Rule And Process Architecture Council
DRC ;Design Rule Check
DRE;Destruction Removal Efficiency
DRIFTS;Diffuse Reflectance Infrared Fourier Transform Spectroscopy
DRT;Defect Review Tool
DS;Decision Support
DSA;Display System Activity
DSC;Differential Scanning Calorimetry
DSE;Droplet Surface Etching
DSF;Dead Space Free
DSM;Data Storage Management
DSMC;Direct Simulation Monte Carlo
DSO;Digital Sampling Oscilloscope
DSP;Differential Signal Processing
DSQ;Downstream Quartz
DSS;Display Stocker Status
DSSC;Dye Sensitized Solar Cell
DSW;Direct Step-On-Wafer
DT;Dynamic Test
DTA;Differential Thermal Analysis
DTC;Direct Thermocouple Control
DTL;Diode Transistor Logic
DTM;Defect Test Monitor
DTMPN;Defect Test Monitor Phase Number
DTV;Digital Television
DUF;Diffusion Under Epitaxial Film
DUT;Device Under Test
DUV;Deep Ultraviolet
DUVSE;Deep Ultraviolet Spectroscopic Ellipsometry
DV;Design Verification
DVER;Design Rule Verification
DVI;Digital Video Interactive
DVM;Digital Voltmeter
DVS;Display Vehicle Status
DWG;Domain Work Group
DWN;Dark Wide Normal
DWO;Dark Wide Oblique
DfM;Design For Manufacturability
DfR;Design For Reliability
Dlasoi;Large Area Soi Defects
DoC;Department Of Commerce
DoD;Department Of Defense
DoE;Department Of Energy
Dsasoi;Small Area Soi Defects
Dt;Thermal Budget
Dy;Dysprosium
E;Modulus
E-beam;Electron Beam
E.q.;Exempli Gratia
E/D;Enhanced Depletion
E/W;Erase/Write
EAPROM;Electrically Alterable PROM
EAPSM;Enbedded-Attenuated Phase Shift Msk
EAROM;Electrically Alterable Read-Only Memory
EASE;Equipment And Software Emulator
EB;Electron Beam
EBAC;Electron Beam Absorbed Current
EBHT;Electron Beam High Throughput Lithography
EBIC;Electron Beam-Induced Current
EBIV;Electron-Beam-Induced Voltage
EBL;Encapsulated Beam Lead
EBR;Edge Bead Removal
EBSD;Electron Backscattering Diffraction
EC;Engineering Change
ECA;Engineering Capability Assessment
ECAD;Electronic Computer-Aided Design
ECAE;Electronic Computer-Aided Engineering
ECAG;Equipment Class Application Guideline
ECC;Error Control Coding
ECD;Electron Capture Detector
ECL;Emitter Coupled Logic
ECMD;Electrochemical-Mechanical Deposition
ECMP;Electro-Chemical-Mechanical Polishing
ECN;Engineering Change Notice
ECO;Engineering Change Order
ECP;Electrochemical Plating
ECQB;Electrochemical Quartz Crystal Balance
ECR;Electron Cyclotron Resonance
ECTC;Electronic Components and Technology Conference
ECTFE;Ethylene Chlorotrifluoroethylene
ECU;Engine Control Unit
EDA;Electronic Design Automation
EDD;Earliest Due Date
EDGE;Enhanced Data Rates For Global Standard For Mobile (Gsm) Evolution
EDI;Electronic Data Interchange
EDIF;Electronic Design Interchange Format
EDP;Electronic Data Processing
EDS;Energy-Dispersive Spectroscopy
EDU;Equipment Dependent Uptime
EDX;Energy-Dispersive X Ray
EDXA;Energy-Dispersive X-Ray Analysis
EE;Electrical Engineering
EEDF;Electron Energy Distribution Function
EELS;Electron Energy-Loss Spectroscopy
EEPROM;Electrically Erasable Programmable Read Only Memory
EEROM;Electrically Erasable ROM
EES;Equipment Engineering System
EFA;Electrical Failure Analysis
EFDIA;Failure Detection And Isolation Arrangement
EFEM;Equipment Front End Module
EFM;Electrical Force Microscopy
EFO;Electronic Flame-Off
EFOCS;Evanescent Fiber Optic Chemical Sensors
EFR;Early Failure Rate
EFS;Extendibility
EFTIR;Emission Fourier Transform Infrared Spectroscopy
EFV;Excess Flow Valve
EG;Extrinsic Gettering
EGE;Ethylene Glycol Ethers
EHO;Estimated Hourly Output
EHS;Extremely Hazardous Substances
EI;Equipment Integration
EIA;Electronic Industries Association
EIC;Extracted Ion Count
EID;Equipment Interface Development
EIP;Equipment Improvement Program
EIS;Electrochemical Impedance Spectroscopy
EKF;Extended Kalman Filter
EL;Experience Level
ELF;Extremely Low Frequency
ELK;Extreme Low K
ELL;Entrance Loadlock
ELS;Extended Life Source
ELU;Environmental Loan Unit
EM;Enterprise Model
EMA;Effective Medium Approximation
EMC;Electromagnetic Capability
EMF;Electromagnetic Field
EMF ;Electromagnetic Field
EMG;Electromigration
EMI;Electromagnetic Interference
EMMA;Electron Microscopy And Microanalysis
EMO;Emergency Off
EMP;Electromagnetic Pulse
EMR;Enter Move Request
EMU;Electromagnetic Unit
ENOB;Effective Number Of Bits
EO;Electro-Optical
EOL;End Of Line
EOS;Electrical Overstress
EOT;End Of Transfer
EOTPR;Electro Optical Terahertz Pulsed Reflectometry
EOY;End Of Year
EP;Extreme Pressure
EPA;Environmental Protection Agency
EPI;Epitaxial Silicon
EPIC;To Be Filled In
EPL;Electron Projection Lithography
EPM;Equipment Performance Metrics
EPMA;Electron-Probe Micro-Analysis
EPO;Emergency Power Off
EPR;Electron Paramagnetic Resonance
EPRI;Electrical Power Research Institute
EPROM;Electrically Programmable Read-Only Memory
EPSM;Embedded Phase Shift Mask
EPSS;Electronic Performance Support System
EPT;Equipment Performance Tracking
EQCA;Electronic Qca
EQUIP C/I;Equipment Control And Integration
EQUIP RTC;Equipment Real-Time Control
ERAM;Equipment Reliability
ERBW;Effective Resolution Bandwidth
ERC;Equivalent Release Concentration
ERCS;Exponential Ramped Current Stress
ERD;Elastic Recoil Detection
ERG;Enhancement And Review Group
ERM;Enterprise Reference Model
ERN;External Recurrent Neural Network
ERP;Extended Range Pyrometer
ERS;Event Reporting Standard
ERT;Emergency Response Time
ES;Engineering Specification
ES-level;Electronic System Level
ESA;Electrostatic Attracted
ESC;Electrostatic Chuck
ESCA;Electron Spectroscopy (For) Chemical Analysis
ESD;Electrostatic Discharge
ESEM;Environmental Scanning Electron Microscope
ESH;Environment
ESIA;European Semiconductor Industry Association
ESM;Electronic Service Manual
ESP;Electronic Stability Control
ESPRIT;European Strategic Program For Research In Information Technology
ESR;Equivalent Series Resistance
ESREF;European Symposium on Reliability of Electron Devices
ESS;Environmental Stress Screening
ESTC;Electronics System-Integration Technology Conferences
ESTM;Electrochemical Scanning Tunneling Microscope
ESW;Embedded Software
ETA;Event Tree Analysis
ETAB;Executive Technical Advisory Board
ETQR;External Total Quality And Reliability
ETS;Engineering Test Stand
EUV;Extreme Ultraviolet
EUVL;Extreme Ultraviolet Lithography
EUVLLC;Euv Limited Liability Corporation
EVA;Ethylene Vinyl Acetate
EVC;Equilibrium Vapor Concentration
EW;Electrolyzed Water
EWMA;Exponentially Weighted Moving Average
EYE;Edinburgh Yield Estimator
Ec;Coercive Field
Er;Erbium
Es;Einsteinium
Eu;Europium
F;Fluorine
F/E;Focus/Exposure
F/I;Final Inspect
FA;Failure Analysis
FAB;Fast Atom Bombardment
FACS;Fast Access To Critical Solutions
FAMOS;Floating-Gate Avalanche-Injection Metal-Oxide Semiconductor
FB;Floating Body
FBAR;Filter Bulk Acoustic Resonator
FBGA;Fine Pitch Ball Grid Array
FC;Flip Chip
FCA;Free-Carrier Absorption
FCB;Flip Chip Bonding
FCBGA;Flip-Chip Ball Grid Array
FCM;Facilities Cost Model
FCS;Factory Control System
FD;Fully Depleted
FD-SOI;Fully Depleted Soi
FDA;Food And Drug Administration
FDC;Fault Detection And Classification
FDE;Frequency Domain Experiments
FDSOI;Fully Depleted Silicon On Insulator
FDTD;Finite Difference Time Domain
FE;Finite Element
FEA;Finite Element Analysis
FEC;Fabrication Evaluation Chip
FEG;Field Emission Gun
FEM;Finite Element Model
FEOL;Front End Of Line
FEP ;Front-End Processes
FESEM;Field Emission Scanning Electron Microscope/Microscopy
FESEMs;Field Emission Scanning Electron Microscopes
FET;Field-Effect Transistor
FFDM;Function Failure Design Method
FFT;Fast Fourier Transform
FFU;Filter Fan Unit
FG;Finished Goods
FI;Filterability Index
FIA;Field Interferometer Alignment
FIB;Focused Ion Beam
FICS;Factory Information And Control Systems
FID;Flame Ionization Detector
FIDAP;Fluid Dynamics Analysis Package
FIFO;First-In
FIM;Field Ion Microscope
FIMA;Factory Integration Maturity Assessment
FIMS;Front-Opening Interface Mechanical Standard
FIT;Failure Unit
FITS;Failures In Time
FL;Fuzzy Logic
FLASH;Flash Memory Device
FLOODS;Florida Object-Oriented Device Simulator
FLOOPS ;Florida Object-Oriented Process Simulator
FLOPC;Floating Point Operations Needed Per Cycle
FLOTOX;Floating Gate Tunnel Oxide
FLRT;Factory Layout/Relayout Tool
FM;Foreign Material
FMA;Failure Mode Assessment
FMEA;Failure Mode And Effects Analysis
FMECA;Failure Mode Effect and Criticality Analysis
FMEDA;Failure Modes Effects and Diagnostic Analysis
FMI;Fluorescent Microthermal Imaging
FMMC;Factory Material Movement Component
FMMEA;Failure Modes Mechanisms and Effects Analysis
FMS;Forms Management System
FMVP;Framework Member Validation Project
FMo;Thyristors Failure Mode
FMos;Failure Modes
FMs;Failure Mechanisms
FNN;Feed-Forward Neural Network
FO;Fan-Out
FO INV;Fan Out Inverter
FO4 INV;Fanout-Of-4 Inverter
FOCS;Fiber Optic Chemical Sensors
FOSB;Front Opening Shipping Box
FOUP;Front Opening Unified Pod
FOV;Field Of View
FOWLP;Fan-Out Wafer Level Package
FOX;Field Oxide
FP;Flash Point
FPBGA;Flip-chip Ball Grid Array
FPD;Focal Plane Deviation
FPGA;Field-Programmable Gate Array
FPLA;Field-Programmable Logic Array
FPLF;Field-Programmable Logic Family
FPLS;Field-Programmable Logic Switch
FPM;Flexual Plate Mode
FPMS;Factory Performance Modeling Software
FPNI;Field Programmable Nanowire Interconnect
FPROM;Field-Programmable Read-Only Memory
FQA;Fixed Quality Area
FRACAS;Failure Reporting
FRAM;Ferroelectric Ram
FRAME;Failure Rate Analysis And Modeling
FRMB;Fast Ramp Mini Batch
FS;Fused Silica
FSE;Field Service Engineers
FSG;Fused Silica Glass
FSM;Finite State Machine
FT;Final Test
FTA;Fault Tree Analysis
FTAB;Focus Technical Advisory Board
FTICR;Fourier Transform Ion Cyclotron Resonance Spectroscopy
FTIR;Fourier Transform Infrared Spectroscopy
FTP;Fast Thermal Processing
FTTF;First Time To Failure
FUSI;Discharge Fully Silicided
FW;Full Wave
FWHM;Full-Width Half-Maximum
FWT;Fluoride Wastewater Treatment
FZ;Float Zone
Fab;Fabrication
Fe;Iron
FeRAM;Ferroelectric Ram
FinFET;Fin Structure Field Effect Transistor
Fm;Fermium
Fmax;Maximum Frequency At Unity Power Gain
Fmin;Minimum Noise Figure
FoM;Figures Of Merit
Fr;Francium
Fs;Sample Rate
GAC;Granular Activated Carbon
GAE;Gas-Assisted Etch
GALS;Globally Asynchronous And Locally Synchronous
GASAD;Gate And Source And Drain
GB;Gigabyte
GC;Gas Chromatography
GCC;Generic Cell Controller
GCD;Gas Chromatography Distillation
GCMS;Gas Chromatography Mass Spectroscopy
GCR;Generalized Cambridge Ring
GDP;Gas Distribution Plate
GDPP;Gas Drive Plasma Pinch
GDS;Generalized Data Stream
GEM;Generic Equipment Model
GEMVS;Gem Verification System
GES;Generic Equipment Simulator
GFA;Gas Fusion Analysis
GFAAS;Graphite Furnace Atomic Absorption Spectrometry/Spectroscopy
GFC;Gas Filter Correlation
GFCI;Ground Fault Circuit Interrupter
GFIS;Gas Field Ion Source
GHG;Greenhouse Gas
GHz;Gigahertz
GI;Global Irrigation
GIDL;Gate-Induced Drain Leakage
GILD;Gas Immersion Laser Doping
GIQLP;Industry Quality Liaison Panel
GIS;Gas Injection System
GJG;Global Joint Guidance
GLC;Gas Liquid Chromatography
GMR;Giant Magneto Resistance
GND;Ground
GOF;Goodness Of Fitness
GOI;Gate Oxide Integrity
GPIB;General-Purpose Interface Bus
GPM;Gross Profit Margin
GPRS;General Packet Radio Service
GPS;Global Positioning System
GRC;Gas Reactor Column
GRTV;Graphite Rapid Thermal Vulcanization
GSCE;Gas Source Control Equipment
GSCI;Generated Subordinate Carrier Injection
GSM;Global Standard For Mobile
GSPID;Gain-Scheduled Proportional Integro-Differential
GTO;Gate-Turn-Off
GTS;Gem Test System
GUI;Graphical User Interface
GWIM;Global Warming Impact Model
GWLE;Good Wafer Level Exposure
GWP;Global Warming Potential
Ga;Gallium
GaAs;Gallium Arsenide
GaN;Gallium Nitride
Gassoc;Associated Gain
Gb;Gigabit
Gb/s;Gigabit Per Second
Gce;Transconductance Between Collector And Emitter Gcib
Gd;Gadolinium
Gds;Transconductance Between Drain And Source
Ge;Germanium
Gi-XRR;Grazing Incidence X-Ray Reflectivity
Gm;Transconductance Between Drain And Gate
H;Hydrogen
HAC;High Aspect Contact
HALT;Highly Accelerated Life Testing
HAP;Hazardous Air Pollutant
HAR;High Aspect Ratio
HARC;High Aspect Ratio Contact
HARI;High Aspect Ratio Inspection
HASS;Highly Accelerated Stress Screening
HAST;Highly Accelerated Stress Testing
HASTs;Highly Accelerated Stress Tests
HAZCOM;Hazard Communication Standard
HB;Horizontal Bridgeman Crystal
HBM;Human Body Model
HBT;Heterojunction Bipolar Transistor
HBTs;The Heterojunction Bipolar Transistors
HC;Hot-Carrier
HCD;Hot-Carrier Degradation
HCI;Hot Carrier Injection
HCM;Hollow Cathode Magnetron
HCMOS;High Density Complementary Metal-Oxide Semiconductor
HCS;Hot-Carrier Suppressed
HCl;Hydrochloric Acid
HD;High Density
HDD;High Density Disk
HDL;Hardware Description Language
HDP;High Density Plasma
HDPE;High Density Polyethylene
HE;High Energy
HEM;High Efficiency Matching
HEMT;High Electron Mobility Transistor
HEMTs;The High Electron Mobility Transistors
HEPA;High Efficiency Particulate Air
HEX;Heat Exhaust
HF;Hydrofluoric Acid
HFET;Heterojunction Field Effect Transistor
HFETs;Gan Heterojunction Field Effect Transistors
HFRR;Hydrofluoric Acid Reprocessor Return System
HI;Holographic Interferometry
HIBS;Heavy Ion Backscattering Spectrometry
HICs;Hybrid Integrated Circuits
HIM;Heated Injection Manifold
HLF;Horizontal Laminar Flow
HMDS;Hexamethyldisilizane
HMIS;Hazardous Materials Inventory Statement
HMMP;Hazardous Materials Management Plan
HMOS;High Performance Mos
HOMER;Hazardous Organic Mass Emission Rate
HOPG;Highly Oriented Pyrolitic Graphite
HP;High-Performance
HPCC;High Performance Computing And Communicating
HPEM;Hybrid Plasma Equipment Model
HPL;High Performance Logic
HPLC;High Performance Liquid Chromatography
HPM;Hazardous Production Materials
HPV;High Pressure Vent
HR;High Resolution